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| savantic semiconductor product specification silicon npn power transistors 2N6836 description with to-3 package high voltage ,high speed applications switching regulators inverters motor controls deflection circuits pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 450 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a i cm collector current-peak 20 a i b base current 10 a i bm base current-peak 15 a p c collector power dissipation t c =25 175 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2N6836 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ;i b =0 450 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =0.7a 1.2 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =1.0a t c =100 2.5 3.0 v v besat base-emitter saturation voltage i c =10a; i b =1.0a t c =100 1.5 1.5 v i cev collector cut-off current v ce =850v; v be =-1.5v t c =100 0.25 1.5 ma i ebo emitter cut-off current v eb =6v; i c =0 1.0 ma h fe-1 dc current gain i c =10a ; v ce =5v 8 30 h fe-2 dc current gain i c =15a ; v ce =5v 5 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 50 400 pf f t transition frequency i c =0.25a ; v ce =10v;f=10mhz 10 75 mhz downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors 2N6836 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm) downloaded from: http:/// |
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